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| Shenzhen SI Semiconductors Co., LTD. Product Specification BUL SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST BUL1688 WIDE SOA ELECTRONIC TRANSFORMER Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tc=25C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 700 400 9 5.0 50 150 -65-150 TO-251 UNIT V V V A W C C Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter-Base Voltage Tc=25C SYMBOL ICBO ICEO TEST CONDITION Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Storage Time Falling Time w w w t a .D VCEO VEBO Vces Vbes hFE tS tf S a VCB=700V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 e h U t4 e MIN 400 9 .c MAX 100 250 m o UNIT A A V V IC=1.0A,IB=0.2A IC=2.0A,IB=0.4A IC=4.0A,IB=1.0A 0.5 0.7 1.5 1.5 8 10 8 3 0.8 S 40 V V IC=2.0A,IB=0.4A VCE=5V,IC=10mA VCE=5V,IC=1.0A VCE=5V,IC=2.5A VCC=250V, IC=5IB IB1= -IB2=0.5A Si semiconductors 2004.10 1 www..com Shenzhen SI Semiconductors Co., LTD. Product Specification BUL SERIES TRANSISTORS SOA (DC) 120 100 BUL1688 % Ic(A) 10 Pc Tj 1 80 IS/B 60 0.1 40 20 0 Ptot 0.01 1 hFE 10 100 Vce(v) 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=125 Tj=25 Tj=25 10 Tj= - 40 10 Tj= - 40 Vce=1.5V Vce=5V 1 0.01 0.1 1 Ic(A) 10 1 0.01 0.1 1 Ic(A) 10 10 Vces(v) hFE=5 Vces - Ic 2 Tj=125 Tj=25 Tj= - 40 Vbes(v) hFE=5 Vbes - Ic 1.8 1.6 1.4 1.2 1 0.8 1 Tj= - 40 Tj=25 Tj=125 0.1 0.6 0.4 0.2 0.01 0.1 1 Ic(A) 0 10 0.1 1 Ic(A) 10 Si semiconductors 2004.10 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-251 (IPAK) MECHANICAL DATA UNIT SYMBOL A A1 B b b1 c c1 D D1 E e e1 L 4.5 7.5 min 2.2 1.1 1.35 0.5 0.7 0.46 0.46 6.35 5.2 5.4 2.3 4.7 7.9 nom max 2.4 1.3 1.65 0.7 0.9 0.56 0.56 6.65 5.4 5.6 mm Si semiconductors 2004.10 3 |
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